Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale

Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale

Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks...

Bibliografiset tiedot
Päätekijät:	Chan, C, Reid, B, Taylor, R, Zhuang, Y, Shields, P, Allsopp, D, Jia, W
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2013

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