Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Conference item |
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2010
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| _version_ | 1797101280385040384 |
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| author | Kang, J Gao, Q Joyce, H Tan, H Jagadish, C Kim, Y Guo, Y Xu, H Zou, J Fickenscher, M Smith, L Jackson, H Yarrison-Rice, J |
| author_facet | Kang, J Gao, Q Joyce, H Tan, H Jagadish, C Kim, Y Guo, Y Xu, H Zou, J Fickenscher, M Smith, L Jackson, H Yarrison-Rice, J |
| author_sort | Kang, J |
| collection | OXFORD |
| description | We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE. |
| first_indexed | 2024-03-07T05:49:36Z |
| format | Conference item |
| id | oxford-uuid:e86a0eef-ab38-4cc2-a314-e627341b4248 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:49:36Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | oxford-uuid:e86a0eef-ab38-4cc2-a314-e627341b42482022-03-27T10:46:26ZImprovement of morphology, structure, and optical properties of GaAs nanowires grown on Si substratesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:e86a0eef-ab38-4cc2-a314-e627341b4248Symplectic Elements at Oxford2010Kang, JGao, QJoyce, HTan, HJagadish, CKim, YGuo, YXu, HZou, JFickenscher, MSmith, LJackson, HYarrison-Rice, JWe investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE. |
| spellingShingle | Kang, J Gao, Q Joyce, H Tan, H Jagadish, C Kim, Y Guo, Y Xu, H Zou, J Fickenscher, M Smith, L Jackson, H Yarrison-Rice, J Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates |
| title | Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates |
| title_full | Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates |
| title_fullStr | Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates |
| title_full_unstemmed | Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates |
| title_short | Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates |
| title_sort | improvement of morphology structure and optical properties of gaas nanowires grown on si substrates |
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