Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are...

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Hlavní autoři:	Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J
Médium:	Conference item
Vydáno:	2010

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

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