Simulation of the quantum-confined stark effect in a single InGaN quantum dot

Simulation of the quantum-confined stark effect in a single InGaN quantum dot

By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the q...

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Bibliographic Details
Main Authors:	Lee, K, Robinson, J, Rice, J, Na, J, Taylor, R, Oliver, R, Kappers, M, Humphreys, C
Format:	Conference item
Published:	2004

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