Simulation of the quantum-confined stark effect in a single InGaN quantum dot
By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the q...
| Váldodahkkit: | , , , , , , , |
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| Materiálatiipa: | Conference item |
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2004
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