Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells
We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier tem...
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Format: | Journal article |
Language: | English |
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1985
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author | Ryan, J Taylor, R Turberfield, A Worlock, J |
author_facet | Ryan, J Taylor, R Turberfield, A Worlock, J |
author_sort | Ryan, J |
collection | OXFORD |
description | We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the observation of highly time-dependent linewidths of the Landau levels. © 1985. |
first_indexed | 2024-03-07T05:51:09Z |
format | Journal article |
id | oxford-uuid:e8ec9b49-93e4-4535-9979-d1735727efe5 |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T05:51:09Z |
publishDate | 1985 |
record_format | dspace |
spelling | oxford-uuid:e8ec9b49-93e4-4535-9979-d1735727efe52022-03-27T10:50:27ZPicosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:e8ec9b49-93e4-4535-9979-d1735727efe5EnglishSymplectic Elements at Oxford1985Ryan, JTaylor, RTurberfield, AWorlock, JWe report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the observation of highly time-dependent linewidths of the Landau levels. © 1985. |
spellingShingle | Ryan, J Taylor, R Turberfield, A Worlock, J Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells |
title | Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells |
title_full | Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells |
title_fullStr | Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells |
title_full_unstemmed | Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells |
title_short | Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells |
title_sort | picosecond photoluminescence measurements of landau level lifetimes and time dependent landau level linebroadening in modulation doped gaas gaalas multiple quantum wells |
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