Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...
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Bibliographic Details
| Main Authors: |
Hess, S,
Taylor, R,
O'Sullivan, E,
Ryan, J,
Cain, N,
Roberts, V,
Roberts, J |
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| Format: | Conference item
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| Published: |
1999
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