Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Бусад хувилбаруудыг харуулах (1)

Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...

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Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Hess, S, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J
Формат: Conference item
Хэвлэсэн: 1999
Тодорхойлолт
Тойм:Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.

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