Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...
| المؤلفون الرئيسيون: | , , , , , , |
|---|---|
| التنسيق: | Conference item |
| منشور في: |
1999
|
| _version_ | 1826302690687188992 |
|---|---|
| author | Hess, S Taylor, R O'Sullivan, E Ryan, J Cain, N Roberts, V Roberts, J |
| author_facet | Hess, S Taylor, R O'Sullivan, E Ryan, J Cain, N Roberts, V Roberts, J |
| author_sort | Hess, S |
| collection | OXFORD |
| description | Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities. |
| first_indexed | 2024-03-07T05:51:23Z |
| format | Conference item |
| id | oxford-uuid:e901234a-3b9b-4e85-b10c-49b0eb3b0c0d |
| institution | University of Oxford |
| last_indexed | 2024-03-07T05:51:23Z |
| publishDate | 1999 |
| record_format | dspace |
| spelling | oxford-uuid:e901234a-3b9b-4e85-b10c-49b0eb3b0c0d2022-03-27T10:51:04ZHot carrier relaxation by extreme electron-LO phonon scattering in GaNConference itemhttp://purl.org/coar/resource_type/c_5794uuid:e901234a-3b9b-4e85-b10c-49b0eb3b0c0dSymplectic Elements at Oxford1999Hess, STaylor, RO'Sullivan, ERyan, JCain, NRoberts, VRoberts, JHot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities. |
| spellingShingle | Hess, S Taylor, R O'Sullivan, E Ryan, J Cain, N Roberts, V Roberts, J Hot carrier relaxation by extreme electron-LO phonon scattering in GaN |
| title | Hot carrier relaxation by extreme electron-LO phonon scattering in GaN |
| title_full | Hot carrier relaxation by extreme electron-LO phonon scattering in GaN |
| title_fullStr | Hot carrier relaxation by extreme electron-LO phonon scattering in GaN |
| title_full_unstemmed | Hot carrier relaxation by extreme electron-LO phonon scattering in GaN |
| title_short | Hot carrier relaxation by extreme electron-LO phonon scattering in GaN |
| title_sort | hot carrier relaxation by extreme electron lo phonon scattering in gan |
| work_keys_str_mv | AT hesss hotcarrierrelaxationbyextremeelectronlophononscatteringingan AT taylorr hotcarrierrelaxationbyextremeelectronlophononscatteringingan AT osullivane hotcarrierrelaxationbyextremeelectronlophononscatteringingan AT ryanj hotcarrierrelaxationbyextremeelectronlophononscatteringingan AT cainn hotcarrierrelaxationbyextremeelectronlophononscatteringingan AT robertsv hotcarrierrelaxationbyextremeelectronlophononscatteringingan AT robertsj hotcarrierrelaxationbyextremeelectronlophononscatteringingan |