Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

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Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. I...

Bibliografiset tiedot
Päätekijät:	Hess, S, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J
Aineistotyyppi:	Conference item
Julkaistu:	1999

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