THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS

Bibliographic Details
Main Authors:	Fell, T, Wilshaw, P
Format:	Conference item
Published:	1991

Similar Items

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
by: Fell, T, et al.
Published: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
by: Fell, T, et al.
Published: (1989)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
by: Wilshaw, P, et al.
Published: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
by: Wilshaw, P, et al.
Published: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
by: Wilshaw, P, et al.
Published: (1989)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
by: Wilshaw, P, et al.
Published: (1986)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
by: Fell, T, et al.
Published: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
by: Fell, T, et al.
Published: (1991)

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
by: Wilshaw, P, et al.
Published: (1997)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
by: Fell, T, et al.
Published: (1993)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
by: Galloway, S, et al.
Published: (1993)

Electron beam induced current investigations of transition metal impurities at extended defects in silicon
by: Wilshaw, P, et al.
Published: (1995)

An SEM EBIC study of the electronic properties of dislocations in silicon
by: Wilshaw, P, et al.
Published: (1984)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
by: Giannattasio, A, et al.
Published: (2004)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
by: Senkader, S, et al.
Published: (2001)

The role of dislocations in producing efficient near-bandgap luminescence from silicon
by: Fraser, K, et al.
Published: (2007)

EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
by: A. V. Mudryi, et al.
Published: (2015-03-01)

The segregation behaviour of oxygen at dislocations in silicon
by: Senkader, S, et al.
Published: (1999)

Locking of dislocations by oxygen in Cz-silicon
by: Senkader, S, et al.
Published: (1999)

On the locking of dislocations by oxygen in silicon
by: Senkader, S, et al.
Published: (2001)

Impurity locking of dislocations in silicon
by: Giannattasio, A, et al.
Published: (2004)

AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS
by: Galloway, S, et al.
Published: (1994)

Dislocation locking by nitrogen impurities in FZ-silicon
by: Giannattasio, A, et al.
Published: (2003)

Generation of dislocation glide loops in Czochralski silicon
by: Giannattasio, A, et al.
Published: (2002)

Electron-beam-induced current study of dislocations in GaAs
by: Galloway, SA, et al.
Published: (1994)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
by: Ourmazd, A, et al.
Published: (1982)

Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties
by: Kristof Szot, et al.
Published: (2018-06-01)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
by: Wilshaw, P, et al.
Published: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
by: Wilshaw, P, et al.
Published: (1983)

A study of oxygen dislocation interactions in CZ-Si
by: Senkader, S, et al.
Published: (2000)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
by: Ourmazd, A, et al.
Published: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
by: Ourmazd, A, et al.
Published: (1983)

Dislocation imaging using ion beam induced charge
by: Breese, M, et al.
Published: (1993)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
by: Wilshaw, P, et al.
Published: (1985)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
by: Alpass, C, et al.
Published: (2009)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
by: Gregori, N, et al.
Published: (2012)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
by: Gregori, N, et al.
Published: (2012)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
by: Senkader, S, et al.
Published: (2004)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
by: Murphy, J, et al.
Published: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
by: Murphy, J, et al.
Published: (2006)