Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dots
We report photoluminescence measurements on In0.25Ga0.75As/GaAs quantum well and dots grown on (1 1 1)B GaAs substrate in high magnetic fields up to 45 Tesla. A well-defined PL line with full width at half maximum of approximately 5.5 meV is observed. From an analysis of the zero field transition en...
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| Aineistotyyppi: | Conference item |
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1998
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