Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

We present here a combined experimental and theoretical analysis of the radiative recombination lifetime in a-plane (11 (Formula presented.) 0) InGaN/GaN quantum dots. The structures have been grown by modified droplet epitaxy and time-resolved photoluminescence measurements have been performed to g...

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Detalhes bibliográficos
Main Authors:	Kanta Patra, S, Wang, T, Puchtler, T, Zhu, T, Oliver, R, Taylor, R, Schulz, S
Formato:	Journal article
Publicado em:	Wiley 2017

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