Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
We present here a combined experimental and theoretical analysis of the radiative recombination lifetime in a-plane (11 (Formula presented.) 0) InGaN/GaN quantum dots. The structures have been grown by modified droplet epitaxy and time-resolved photoluminescence measurements have been performed to g...
| Principais autores: | , , , , , , |
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| Formato: | Journal article |
| Publicado em: |
Wiley
2017
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