ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES
Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By...
Үндсэн зохиолчид: | Grovenor, C, Cerezo, A |
---|---|
Формат: | Journal article |
Хэл сонгох: | English |
Хэвлэсэн: |
1989
|
Ижил төстэй зүйлс
-
PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
-н: Demenet, J, зэрэг
Хэвлэсэн: (1989) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
-н: Wilshaw, P, зэрэг
Хэвлэсэн: (1989) -
VLSI fabrication principles : silicon and gallium arsenide /
-н: 359597 Ghandi, Sorab K.
Хэвлэсэн: (1994) -
VLSI fabrication principles: silicon and gallium arsenide/
-н: 359597 Ghandi, Sorab K.
Хэвлэсэн: (1983) -
Gallium arsenide /
-н: Blakemore, John Sydney
Хэвлэсэн: (1987)