Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker
We study the radiation hardness of the Vertical Cavity Surface Emitting Laser diodes (VCSELs) and the epitaxial silicon PIN diodes that will be used for the Atlas SemiConductor Tracker at the CERN Large Hadron Collider. The tests were conducted with 200 MeV protons to a fluence of 4 × 10...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2007
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| _version_ | 1797102299560017920 |
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| author | Chu, M Hou, S Huffman, T Issever, C Lee, S Lu, R Su, D Teng, P Weidberg, A |
| author_facet | Chu, M Hou, S Huffman, T Issever, C Lee, S Lu, R Su, D Teng, P Weidberg, A |
| author_sort | Chu, M |
| collection | OXFORD |
| description | We study the radiation hardness of the Vertical Cavity Surface Emitting Laser diodes (VCSELs) and the epitaxial silicon PIN diodes that will be used for the Atlas SemiConductor Tracker at the CERN Large Hadron Collider. The tests were conducted with 200 MeV protons to a fluence of 4 × 10 14 p / cm 2 and with 20 MeV (average energy) neutrons to 7.7 × 10 14 n / cm 2. The radiation damage of the VCSELs and PINs and the annealing characteristics are presented. © 2007 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-07T06:04:00Z |
| format | Journal article |
| id | oxford-uuid:ed35b32f-9509-4ba3-ad03-54518624480e |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:04:00Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | oxford-uuid:ed35b32f-9509-4ba3-ad03-54518624480e2022-03-27T11:23:09ZRadiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor TrackerJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ed35b32f-9509-4ba3-ad03-54518624480eEnglishSymplectic Elements at Oxford2007Chu, MHou, SHuffman, TIssever, CLee, SLu, RSu, DTeng, PWeidberg, AWe study the radiation hardness of the Vertical Cavity Surface Emitting Laser diodes (VCSELs) and the epitaxial silicon PIN diodes that will be used for the Atlas SemiConductor Tracker at the CERN Large Hadron Collider. The tests were conducted with 200 MeV protons to a fluence of 4 × 10 14 p / cm 2 and with 20 MeV (average energy) neutrons to 7.7 × 10 14 n / cm 2. The radiation damage of the VCSELs and PINs and the annealing characteristics are presented. © 2007 Elsevier B.V. All rights reserved. |
| spellingShingle | Chu, M Hou, S Huffman, T Issever, C Lee, S Lu, R Su, D Teng, P Weidberg, A Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker |
| title | Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker |
| title_full | Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker |
| title_fullStr | Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker |
| title_full_unstemmed | Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker |
| title_short | Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker |
| title_sort | radiation hardness studies of vcsels and pins for the opto links of the atlas semiconductor tracker |
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