Measurement of the uniformity of ablation for 0.53 μm laser irradiation of spherical targets

Measurement of the uniformity of ablation for 0.53 μm laser irradiation of spherical targets

A novel technique of time-resolved monochromatic X-ray imaging has been used to measure the spatial variation of burn through time of an ablator layer on spherical targets irradiated by twelve laser beams of wavelength 0.53 μm and pulse duration 0.8 ns at adsorbed irradiance up to 1014 W cm-2. The e...

Полное описание

Библиографические подробности
Главные авторы:	Apte, P, Brown, D, Cole, A, Key, M, Norreys, P, Wooding, E
Формат:	Journal article
Язык:	English
Опубликовано:	1988

Схожие документы

Measurement of the mass ablation rate for 0.53 μm random phased laser irradiation of spherical targets
по: Norreys, P, и др.
Опубликовано: (1989)

HARMONIC IMAGING STUDIES OF ILLUMINATION UNIFORMITY FOR 0.53-MU-ABLATIVE COMPRESSIONS
по: Aboites, V, и др.
Опубликовано: (1984)

Interaction of 0.53 μm laser pulse with millimeter-scale plasmas generated with gas-bag target
по: Zheng Jian, и др.
Опубликовано: (2013-11-01)

SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS
по: Nicholas, R, и др.
Опубликовано: (1985)

FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
по: Nicholas, R, и др.
Опубликовано: (1985)

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode
по: Ahmed A. M. El-Amir, и др.
Опубликовано: (2018-11-01)

PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
по: Gauthier, D, и др.
Опубликовано: (1988)

ELECTRON-OPTIC PHONON COUPLING IN GA0.47IN0.53AS BASED HETEROSTRUCTURES
по: Nicholas, R, и др.
Опубликовано: (1986)

QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE
по: Nicholas, R, и др.
Опубликовано: (1982)

Local structure of Pb(Zr0.53Ti0.47)O-3
по: Baba-Kishi, K, и др.
Опубликовано: (2014)

OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS
по: Westland, D, и др.
Опубликовано: (1987)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
по: Hu, Hailong., и др.
Опубликовано: (2013)

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
по: Seung Heon Shin, и др.
Опубликовано: (2022-12-01)

Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers
по: Zhejing Jiao, и др.
Опубликовано: (2022-01-01)

K0.53Mn2.37Fe1.24(PO4)3
по: Mongi Ben Amara, и др.
Опубликовано: (2011-01-01)

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm
по: Mansur Mohammed Ali Gamel, и др.
Опубликовано: (2021-04-01)

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
по: Richard D'Costa, Vijay, и др.
Опубликовано: (2014)

Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
по: Priyanka Agrwal, и др.
Опубликовано: (2025-02-01)

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
по: Rogers, D, и др.
Опубликовано: (1986)

适用于长波长光纤通信的0.95～1.65μm In<sub>0.53</sub>Ga<sub>0.47</sub>As光电二极管
по: 沙延洪, и др.
Опубликовано: (1982-01-01)

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
по: Yen-Ting Chen, и др.
Опубликовано: (2012-03-01)

Optical storage for 0.53 s in a solid-state atomic frequency comb memory using dynamical decoupling
по: Adrian Holzäpfel, и др.
Опубликовано: (2020-01-01)

Degradation mechanisms of the Pb1−хBaхZr0,53Ti0,47O3−δ ferroelectric structure
по: L. I. Hurski, и др.
Опубликовано: (2020-11-01)

1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
по: Razeghi, M, и др.
Опубликовано: (1986)

650～700℃ LPE生长三元合金In<sub>0.53</sub>Ga<sub>0.47</sub>As/（100）Inp
по: 李树翔
Опубликовано: (1988-01-01)

High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
по: Yang, Li, и др.
Опубликовано: (2014)

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment
по: P. Huang, и др.
Опубликовано: (2021-01-01)

AN ANALYTIC MODEL FOR LASER-DRIVEN ABLATIVE IMPLOSION OF SPHERICAL-SHELL TARGETS
по: Ahlborn, B, и др.
Опубликовано: (1982)

Multiferroic CoFe2O4-Pb(Zr0.53Ti0.47)O3 thick films for magnetoelectric application
по: Chen, Wei
Опубликовано: (2012)

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
по: Sun, Handong, и др.
Опубликовано: (2009)

Dark current investigation in individual planar In0.53Ga0.47As/InP detector and fine pixel-pitch array with spacing variations
по: Wenqi Wang, и др.
Опубликовано: (2021-12-01)

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
по: Hyeon-Bhin Jo, и др.
Опубликовано: (2018-07-01)

Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors
по: I. Kostakis, и др.
Опубликовано: (2013-09-01)

Monolithic Side-Pumped Amplifier Based on an Yb-Doped Tapered-Fiber and Yielding 0.53 MW 9.3 ps Pulses
по: Konstantin Bobkov, и др.
Опубликовано: (2022-10-01)

Effect of Solution Treatment Temperature on Microstructure and Properties of Fe-0.72Mn-3.7Al-0.53C Low-Density Cast Steel
по: Nan Song, и др.
Опубликовано: (2022-07-01)

Clinical Trial Protocol: VAC053 Protocol v5.0
по: Hill, A
Опубликовано: (2019)

Pulse generation of mode-locking fiber laser at 1.053 µM using graphene oxide film as saturable absorber
по: Hazlihan Haris, и др.
Опубликовано: (2021)

Likely Detection of GeV γ-Ray Emission from Pulsar Wind Nebula G32.64+0.53 with Fermi-LAT
по: Yifan Xiao, и др.
Опубликовано: (2024-01-01)

Fabrication and Electrical Characterization of Lead-Free BiFe0.91(Mn0.47Ti0.53)0.09O3–BaTiO3 Ceramics
по: Nguyen Truong Tho
Опубликовано: (2020-06-01)

A pinhole camera for monochromatic x-ray imaging
по: Cole, A, и др.
Опубликовано: (1987)