The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis

The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis

Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates two ferromagnetic layers. Here we report...

Bibliografiset tiedot
Päätekijät:	Petford-Long, A, Ma, Y, Cerezo, A, Larson, D, Singleton, E, Karr, B
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2005

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