The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis
Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates two ferromagnetic layers. Here we report...
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
2005
|