The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis
Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates two ferromagnetic layers. Here we report...
| Үндсэн зохиолчид: | , , , , , |
|---|---|
| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2005
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