Electron states, magneto-transport and carrier dynamics in modulation-doped V-groove quantum wires
We report electrical transport and photoluminescence measurements of modulation-doped GaAs/AlGaAs V-groove quantum wires. Magneto-resistance measurements clearly indicate that transport occurs through the bottom layer in wide structures, whereas sidewall quantum wells may contribute in the case of n...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Conference item |
| Published: |
1998
|
| Summary: | We report electrical transport and photoluminescence measurements of modulation-doped GaAs/AlGaAs V-groove quantum wires. Magneto-resistance measurements clearly indicate that transport occurs through the bottom layer in wide structures, whereas sidewall quantum wells may contribute in the case of narrow structures. Strong anisotropy of the photoluminescence clearly identifies quantum wire recombination. The energy of this state is strongly dependent on the incident laser power, increasing with increasing energy, and pinning at the energy of the sidewall quantum well. The considerably reduced quantum wire electron-hole recombination rate obtained from time-resolved photoluminescence measurements, together with the density-dependence of the energy suggest that electron-hole separation occurs during the relaxation process. (C) 1998 Elsevier Science Ltd. All rights reserved. |
|---|