Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

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We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike...

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Bibliographic Details
Main Authors: Kim, J, Moon, SR, Kim, Y, Chen, Z, Zou, J, Choi, D, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Format: Journal article
Language:English
Published: 2012
Description
Summary:We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.

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