Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon

Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon

This article demonstrates an approach for multiscale characterisation of individual defects, such as grain boundaries, in multicrystalline silicon. The analysis techniques range from macroscale characterisation of average bulk lifetime, through photoluminescence to resolve spatial recombination, and...

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Dades bibliogràfiques
Autors principals:	Tweddle, D, Shaw, E, Douglas, J, Bonilla, R, Moody, M, Hamer, P, Wilshaw, P
Format:	Conference item
Publicat:	AIP Publishing 2018

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