Atom probe Tomography of fast-diffusing impurities and the effect of gettering in multicrystalline silicon
This article demonstrates an approach for multiscale characterisation of individual defects, such as grain boundaries, in multicrystalline silicon. The analysis techniques range from macroscale characterisation of average bulk lifetime, through photoluminescence to resolve spatial recombination, and...
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| פורמט: | Conference item |
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AIP Publishing
2018
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