Improved Performance of GaAs-based Terahertz Emitters
We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.
Podrobná bibliografie
| Hlavní autoři: |
Headley, C,
Fu, L,
Parkinson, P,
Xu, X,
Lloyd-Hughes, J,
Jagadish, C,
Johnston, M,
IEEE |
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| Médium: | Conference item
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| Vydáno: |
2010
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