Improved Performance of GaAs-based Terahertz Emitters
We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.
| المؤلفون الرئيسيون: | , , , , , , , |
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| التنسيق: | Conference item |
| منشور في: |
2010
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