Improved Performance of GaAs-based Terahertz Emitters

We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

書目詳細資料
Main Authors: Headley, C, Fu, L, Parkinson, P, Xu, X, Lloyd-Hughes, J, Jagadish, C, Johnston, M, IEEE
格式: Conference item
出版: 2010