Stress and relief of misfit strain of Ge/Si(001)
The intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was investigated in the range 700-1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
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1998
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| _version_ | 1797102670711881728 |
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| author | Wedler, G Walz, J Hesjedal, T Chilla, E Koch, R |
| author_facet | Wedler, G Walz, J Hesjedal, T Chilla, E Koch, R |
| author_sort | Wedler, G |
| collection | OXFORD |
| description | The intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was investigated in the range 700-1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. The temperature dependence of strain relief by 3D islands as well as their nucleation and growth behavior support a kinetic pathway for 3D islanding. |
| first_indexed | 2024-03-07T06:09:16Z |
| format | Journal article |
| id | oxford-uuid:eeea9dda-d40a-4d54-a254-0211af5b774e |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:09:16Z |
| publishDate | 1998 |
| record_format | dspace |
| spelling | oxford-uuid:eeea9dda-d40a-4d54-a254-0211af5b774e2022-03-27T11:36:22ZStress and relief of misfit strain of Ge/Si(001)Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:eeea9dda-d40a-4d54-a254-0211af5b774eEnglishSymplectic Elements at Oxford1998Wedler, GWalz, JHesjedal, TChilla, EKoch, RThe intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was investigated in the range 700-1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. The temperature dependence of strain relief by 3D islands as well as their nucleation and growth behavior support a kinetic pathway for 3D islanding. |
| spellingShingle | Wedler, G Walz, J Hesjedal, T Chilla, E Koch, R Stress and relief of misfit strain of Ge/Si(001) |
| title | Stress and relief of misfit strain of Ge/Si(001) |
| title_full | Stress and relief of misfit strain of Ge/Si(001) |
| title_fullStr | Stress and relief of misfit strain of Ge/Si(001) |
| title_full_unstemmed | Stress and relief of misfit strain of Ge/Si(001) |
| title_short | Stress and relief of misfit strain of Ge/Si(001) |
| title_sort | stress and relief of misfit strain of ge si 001 |
| work_keys_str_mv | AT wedlerg stressandreliefofmisfitstrainofgesi001 AT walzj stressandreliefofmisfitstrainofgesi001 AT hesjedalt stressandreliefofmisfitstrainofgesi001 AT chillae stressandreliefofmisfitstrainofgesi001 AT kochr stressandreliefofmisfitstrainofgesi001 |