Stress and relief of misfit strain of Ge/Si(001)
The intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was investigated in the range 700-1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1998
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