Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands
Self organized etching techniques for fabricating a quasiregular array of MnAs nanoislands were discussed. The strain balance in the MnAs layer grown on GaAs substrates collapsed when the heterostructure was immersed in a wet-chemical etch solution and regular row of cracks and submicron-wide strips...
| Asıl Yazarlar: | , , , , , , |
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| Materyal Türü: | Journal article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
2003
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| _version_ | 1826304236160286720 |
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| author | Takagaki, Y Wiebicke, E Hesjedal, T Kostial, H Herrmann, C Daweritz, L Ploog, K |
| author_facet | Takagaki, Y Wiebicke, E Hesjedal, T Kostial, H Herrmann, C Daweritz, L Ploog, K |
| author_sort | Takagaki, Y |
| collection | OXFORD |
| description | Self organized etching techniques for fabricating a quasiregular array of MnAs nanoislands were discussed. The strain balance in the MnAs layer grown on GaAs substrates collapsed when the heterostructure was immersed in a wet-chemical etch solution and regular row of cracks and submicron-wide strips were carved from it. It was also shown that MnAs islands could serve as a nearly ideal etch mask to create GaAs columns by dry etching. |
| first_indexed | 2024-03-07T06:14:43Z |
| format | Journal article |
| id | oxford-uuid:f0affb1b-7e1d-46fb-a260-f25c9887dbd8 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:14:43Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | oxford-uuid:f0affb1b-7e1d-46fb-a260-f25c9887dbd82022-03-27T11:50:06ZSelf-organized etching technique for fabricating a quasiregular array of MnAs nanoislandsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f0affb1b-7e1d-46fb-a260-f25c9887dbd8EnglishSymplectic Elements at Oxford2003Takagaki, YWiebicke, EHesjedal, TKostial, HHerrmann, CDaweritz, LPloog, KSelf organized etching techniques for fabricating a quasiregular array of MnAs nanoislands were discussed. The strain balance in the MnAs layer grown on GaAs substrates collapsed when the heterostructure was immersed in a wet-chemical etch solution and regular row of cracks and submicron-wide strips were carved from it. It was also shown that MnAs islands could serve as a nearly ideal etch mask to create GaAs columns by dry etching. |
| spellingShingle | Takagaki, Y Wiebicke, E Hesjedal, T Kostial, H Herrmann, C Daweritz, L Ploog, K Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands |
| title | Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands |
| title_full | Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands |
| title_fullStr | Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands |
| title_full_unstemmed | Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands |
| title_short | Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands |
| title_sort | self organized etching technique for fabricating a quasiregular array of mnas nanoislands |
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