Dynamics of resonantly excited excitons in GaN
We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observ...
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التفاصيل البيبلوغرافية
| المؤلفون الرئيسيون: |
Hess, S,
Walraet, F,
Taylor, R,
Ryan, J,
Beaumont, B,
Gibart, P |
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| التنسيق: | Journal article
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| اللغة: | English |
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| منشور في: |
1998
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