Dynamics of resonantly excited excitons in GaN

Dynamics of resonantly excited excitons in GaN

Бусад хувилбаруудыг харуулах (1)

We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observ...

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Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Hess, S, Walraet, F, Taylor, R, Ryan, J, Beaumont, B, Gibart, P
Формат:	Journal article
Хэл сонгох:	English
Хэвлэсэн:	1998

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