LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

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Dades bibliogràfiques
Autors principals:	Mallard, R, Wilshaw, P, Mason, N, Walker, P, Booker, G
Format:	Journal article
Publicat:	1989

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