LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

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Bibliografiske detaljer
Main Authors:	Mallard, R, Wilshaw, P, Mason, N, Walker, P, Booker, G
Format:	Journal article
Udgivet:	1989

Lignende værker

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
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Udgivet: (1989)

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PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
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GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
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