LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

Show other versions (1)

Detalles Bibliográficos
Main Authors:	Mallard, R, Wilshaw, P, Mason, N, Walker, P, Booker, G
Formato:	Journal article
Publicado:	1989

Títulos similares

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
por: Mallard, R, et al.
Publicado: (1989)

GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
por: Chidley, E, et al.
Publicado: (1989)

GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
por: Haywood, S, et al.
Publicado: (1989)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
por: Warburton, R, et al.
Publicado: (1991)

PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
por: Chidley, E, et al.
Publicado: (1991)

MOCVD Growth of GaSb and Al GaSb
por: E. Sustini, et al.
Publicado: (2019-01-01)

GASB HETEROSTRUCTURES GROWN BY MOVPE
por: Chidley, E, et al.
Publicado: (1988)

GaN epitaxial layers grown on multilayer graphene by MOCVD
por: Tianbao Li, et al.
Publicado: (2018-04-01)

Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates
por: P. W. Sze, et al.
Publicado: (1995-01-01)

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
por: Booker, G, et al.
Publicado: (1994)

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
por: Booker, G, et al.
Publicado: (1995)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: D. Benyahia, et al.
Publicado: (2018-07-01)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
por: Lakrimi, M, et al.
Publicado: (1991)

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
por: A. A. Marmalyuk, et al.
Publicado: (2009-04-01)

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy
por: T. Kawazu, et al.
Publicado: (2016-04-01)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Akihiro Ohtake, et al.
Publicado: (2018-11-01)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
por: Lakrimi, M, et al.
Publicado: (1992)

InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates
por: Klaudia Hackiewicz, et al.
Publicado: (2019-10-01)

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
por: Vakiv N. M., et al.
Publicado: (2014-06-01)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
por: Haywood, S, et al.
Publicado: (1991)

A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD
por: Ni, Pei-Nan, et al.
Publicado: (2017)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
por: Jiang, N, et al.
Publicado: (2013)

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
por: Yan Teng, et al.
Publicado: (2021-01-01)

Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD
por: Jin, Y. J., et al.
Publicado: (2022)

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
por: Guo, Y, et al.
Publicado: (2010)

ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD
por: Т. А. Bagaev, et al.
Publicado: (2013-08-01)

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy
por: A. Gilbert, et al.
Publicado: (2025-01-01)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
por: Balakrishnan G, et al.
Publicado: (2009-01-01)

High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD
por: He Zhu, et al.
Publicado: (2021-12-01)

MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
por: K. F. Yarn
Publicado: (2002-01-01)

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates
por: Roberto Saúl Castillo-Ojeda, et al.
Publicado: (2017-03-01)

13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD
por: Richard Brown, et al.
Publicado: (2025-01-01)

Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
por: K. F. Yarn, et al.
Publicado: (2003-01-01)

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy
por: Igor V. Shtrom, et al.
Publicado: (2024-11-01)

(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
por: Yunlong He, et al.
Publicado: (2025-07-01)

DEFECT CHARACTERIZATION IN MOCVD INP/GAINAS/INP LAYERS
por: Jin, N, et al.
Publicado: (1993)

Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation
por: Liu, Yunpeng
Publicado: (2024)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
por: V. Orejuela, et al.
Publicado: (2024-09-01)

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics
por: Ying Wang, et al.
Publicado: (2018-08-01)

Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy
por: Loke, Wan Khai, et al.
Publicado: (2013)