LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

Ítems similars

• LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
  per: Mallard, R, et al.
  Publicat: (1989)
• GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
  per: Chidley, E, et al.
  Publicat: (1989)
• GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
  per: Haywood, S, et al.
  Publicat: (1989)
• PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
  per: Warburton, R, et al.
  Publicat: (1991)
• PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
  per: Chidley, E, et al.
  Publicat: (1991)