LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

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• LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
  gan: Mallard, R, et al.
  Cyhoeddwyd: (1989)
• GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
  gan: Chidley, E, et al.
  Cyhoeddwyd: (1989)
• GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
  gan: Haywood, S, et al.
  Cyhoeddwyd: (1989)
• PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
  gan: Warburton, R, et al.
  Cyhoeddwyd: (1991)
• PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
  gan: Chidley, E, et al.
  Cyhoeddwyd: (1991)