LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

Míreanna comhchosúla

• LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
  de réir: Mallard, R, et al.
  Foilsithe / Cruthaithe: (1989)
• GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
  de réir: Chidley, E, et al.
  Foilsithe / Cruthaithe: (1989)
• GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
  de réir: Haywood, S, et al.
  Foilsithe / Cruthaithe: (1989)
• PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
  de réir: Warburton, R, et al.
  Foilsithe / Cruthaithe: (1991)
• PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
  de réir: Chidley, E, et al.
  Foilsithe / Cruthaithe: (1991)