LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

Podobne zapisy

• LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
  od: Mallard, R, i wsp.
  Wydane: (1989)
• GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
  od: Chidley, E, i wsp.
  Wydane: (1989)
• GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
  od: Haywood, S, i wsp.
  Wydane: (1989)
• PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
  od: Warburton, R, i wsp.
  Wydane: (1991)
• PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
  od: Chidley, E, i wsp.
  Wydane: (1991)