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LATTICE-RELAXATION OF STRAINED...
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LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
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書目詳細資料
Main Authors:
Mallard, R
,
Wilshaw, P
,
Mason, N
,
Walker, P
,
Booker, G
格式:
Journal article
出版:
1989
持有資料
實物特徵
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LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
由
Mallard, R
,
Wilshaw, P
,
Mason, N
,
Walker, P
,
Booker, G
出版 1989
Conference item
Show all versions (2)
相似書籍
LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
由: Mallard, R, et al.
出版: (1989)
GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
由: Chidley, E, et al.
出版: (1989)
GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
由: Haywood, S, et al.
出版: (1989)
PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
由: Warburton, R, et al.
出版: (1991)
PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
由: Chidley, E, et al.
出版: (1991)