P3HT as a hole transport layer for colloidal quantum dot solar cells

Lead sulfide colloidal quantum dot (CQD) solar cells demonstrate extremely high short-circuit currents (Jsc ) and are making decent progress in power conversion efficiencies. However, the low fill factors (FF) and open-circuit voltages have to be addressed with urgency to prevent the stalling...

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Main Authors: Neo, D, Zhang, N, Tazawa, Y, Jiang, H, Hughes, G, Grovenor, C, Assender, H, Watt, A
Format: Journal article
Published: American Chemical Society 2016
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author Neo, D
Zhang, N
Tazawa, Y
Jiang, H
Hughes, G
Grovenor, C
Assender, H
Watt, A
author_facet Neo, D
Zhang, N
Tazawa, Y
Jiang, H
Hughes, G
Grovenor, C
Assender, H
Watt, A
author_sort Neo, D
collection OXFORD
description Lead sulfide colloidal quantum dot (CQD) solar cells demonstrate extremely high short-circuit currents (Jsc ) and are making decent progress in power conversion efficiencies. However, the low fill factors (FF) and open-circuit voltages have to be addressed with urgency to prevent the stalling of efficiency improvements. This paper highlights the importance of improving hole extraction, which received much less attention as compared to the electron accepting component of the device architecture (eg. TiO2 or ZnO). Here, we show the use of semiconducting polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) to create efficient CQD devices by improving hole transport, removing interfacial barriers and minimizing shunt pathways, thus resulting in an overall improvement in device performance stemming from better Jsc and FF.
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spelling oxford-uuid:f21ae382-086c-4a2e-b251-f3fa7c5d77cc2022-03-27T12:01:00ZP3HT as a hole transport layer for colloidal quantum dot solar cellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f21ae382-086c-4a2e-b251-f3fa7c5d77ccSymplectic Elements at OxfordAmerican Chemical Society2016Neo, DZhang, NTazawa, YJiang, HHughes, GGrovenor, CAssender, HWatt, ALead sulfide colloidal quantum dot (CQD) solar cells demonstrate extremely high short-circuit currents (Jsc ) and are making decent progress in power conversion efficiencies. However, the low fill factors (FF) and open-circuit voltages have to be addressed with urgency to prevent the stalling of efficiency improvements. This paper highlights the importance of improving hole extraction, which received much less attention as compared to the electron accepting component of the device architecture (eg. TiO2 or ZnO). Here, we show the use of semiconducting polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) to create efficient CQD devices by improving hole transport, removing interfacial barriers and minimizing shunt pathways, thus resulting in an overall improvement in device performance stemming from better Jsc and FF.
spellingShingle Neo, D
Zhang, N
Tazawa, Y
Jiang, H
Hughes, G
Grovenor, C
Assender, H
Watt, A
P3HT as a hole transport layer for colloidal quantum dot solar cells
title P3HT as a hole transport layer for colloidal quantum dot solar cells
title_full P3HT as a hole transport layer for colloidal quantum dot solar cells
title_fullStr P3HT as a hole transport layer for colloidal quantum dot solar cells
title_full_unstemmed P3HT as a hole transport layer for colloidal quantum dot solar cells
title_short P3HT as a hole transport layer for colloidal quantum dot solar cells
title_sort p3ht as a hole transport layer for colloidal quantum dot solar cells
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