On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
The interaction between oxygen atoms and dislocations in Czochralski-grown silicon has been studied experimentally. Measurements concerning the locking of dislocations by oxygen atoms have been carried out in the temperature range 450-850degreesC for different annealing times Using samples with low...
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| Formato: | Conference item |
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2002
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