Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure

We have investigated the 2D --> 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D --> 2D resonant tunneling between confi...

Full description

Bibliographic Details
Main Authors: Im, H, Klipstein, P, Smith, J, Grey, R, Hill, G
Format: Conference item
Published: 1999
Description
Summary:We have investigated the 2D --> 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D --> 2D resonant tunneling between confined transverse X-X,X-Y states but not between longitudinal X-Z states. In this paper, we demonstrate the existence of such resonant tunneling in samples with very thin well and barrier layers. The existence of detectable 2D --> 2D resonant tunneling between X-Z states, even in a structure with a barrier thickness of 40 Angstrom, is striking. However, by modelling the transport in terms of quantum beats between symmetric and anti-symmetric double well states, we show that Gamma-X-Z mixing can produce enhancements of up to approximate to 10(2).