Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure
We have investigated the 2D --> 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D --> 2D resonant tunneling between confi...
| Hlavní autoři: | , , , , |
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| Médium: | Conference item |
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1999
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| _version_ | 1826304744184872960 |
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| author | Im, H Klipstein, P Smith, J Grey, R Hill, G |
| author_facet | Im, H Klipstein, P Smith, J Grey, R Hill, G |
| author_sort | Im, H |
| collection | OXFORD |
| description | We have investigated the 2D --> 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D --> 2D resonant tunneling between confined transverse X-X,X-Y states but not between longitudinal X-Z states. In this paper, we demonstrate the existence of such resonant tunneling in samples with very thin well and barrier layers. The existence of detectable 2D --> 2D resonant tunneling between X-Z states, even in a structure with a barrier thickness of 40 Angstrom, is striking. However, by modelling the transport in terms of quantum beats between symmetric and anti-symmetric double well states, we show that Gamma-X-Z mixing can produce enhancements of up to approximate to 10(2). |
| first_indexed | 2024-03-07T06:22:26Z |
| format | Conference item |
| id | oxford-uuid:f3251ddf-09ca-4627-96bd-581396906f53 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T06:22:26Z |
| publishDate | 1999 |
| record_format | dspace |
| spelling | oxford-uuid:f3251ddf-09ca-4627-96bd-581396906f532022-03-27T12:09:43ZEnhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressureConference itemhttp://purl.org/coar/resource_type/c_5794uuid:f3251ddf-09ca-4627-96bd-581396906f53Symplectic Elements at Oxford1999Im, HKlipstein, PSmith, JGrey, RHill, GWe have investigated the 2D --> 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D --> 2D resonant tunneling between confined transverse X-X,X-Y states but not between longitudinal X-Z states. In this paper, we demonstrate the existence of such resonant tunneling in samples with very thin well and barrier layers. The existence of detectable 2D --> 2D resonant tunneling between X-Z states, even in a structure with a barrier thickness of 40 Angstrom, is striking. However, by modelling the transport in terms of quantum beats between symmetric and anti-symmetric double well states, we show that Gamma-X-Z mixing can produce enhancements of up to approximate to 10(2). |
| spellingShingle | Im, H Klipstein, P Smith, J Grey, R Hill, G Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure |
| title | Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure |
| title_full | Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure |
| title_fullStr | Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure |
| title_full_unstemmed | Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure |
| title_short | Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure |
| title_sort | enhancement of 2d gt 2d tunneling by gamma x z mixing in gaas alas resonant tunneling structures at high pressure |
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