Interface composition dependence of the band offset in InAs/GaSb
We have performed 4 K magnetotransport measurements on intrinsic InAs/GaSb multi quantum wells (MQWs) under hydrostatic pressure. Through careful configuration of the growth we are able to produce samples that have differing interface monolayers (either InSb or GaAs). Analysing the data to calculate...
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Bibliographic Details
| Main Authors: |
Daly, MS,
Symons, D,
Lakrimi, M,
Nicholas, R,
Mason, N,
Walker, P |
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| Format: | Conference item
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| Published: |
1996
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