Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates
We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 Ω cm, we use ion implantation and subsequent...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2011
|