Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates
We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 Ω cm, we use ion implantation and subsequent...
| Автори: | , , , , , , |
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| Формат: | Journal article |
| Мова: | English |
| Опубліковано: |
2011
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