TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
Autors principals: | Kressrogers, E, Nicholas, R, Englert, T, Pepper, M |
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Format: | Journal article |
Publicat: |
1980
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Ítems similars
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CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
per: Kressrogers, E, et al.
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THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
per: Kressrogers, E, et al.
Publicat: (1983) -
ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
per: Nicholas, R, et al.
Publicat: (1980) -
TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE
per: Nicholas, R, et al.
Publicat: (1982) -
Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
per: Muhamad Syahir Tumaran, 1987-, et al.
Publicat: (2010)