TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
Κύριοι συγγραφείς: | Kressrogers, E, Nicholas, R, Englert, T, Pepper, M |
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Μορφή: | Journal article |
Έκδοση: |
1980
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Παρόμοια τεκμήρια
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CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
ανά: Kressrogers, E, κ.ά.
Έκδοση: (1982) -
THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
ανά: Kressrogers, E, κ.ά.
Έκδοση: (1983) -
ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
ανά: Nicholas, R, κ.ά.
Έκδοση: (1980) -
TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE
ανά: Nicholas, R, κ.ά.
Έκδοση: (1982) -
Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
ανά: Muhamad Syahir Tumaran, 1987-, κ.ά.
Έκδοση: (2010)