TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS

Bibliográfalaš dieđut
Váldodahkkit:	Kressrogers, E, Nicholas, R, Englert, T, Pepper, M
Materiálatiipa:	Journal article
Almmustuhtton:	1980

Geahča maid

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Almmustuhtton: (1982)

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Design and characterisation of strained silicon MOSFET /
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High frequency noise in deep-submicrometer silicon mosfets
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Design and characterisation of strained silicon MOSFET [electronic resource] /
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Almmustuhtton: (2007)

Characterization of double gate silicon on insulator (SOI) MOSFET /
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A semi-empirical model for strained silicon mosfet /
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Modeling of deep submicron silicon on insulator (SOI) mosfet /
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Compact modeling of gate-all-around silicon nanowire MOSFETs
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Design and characterisation of biaxial strained silicon N-channel MOSFET /
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Characterization of strained silicon MOSFET using semiconductor TCAD tools
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The effect of different ge concentration on the characteristics of strain silicon MOSFET /
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Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools /
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A two-dimensional analytical model for short channel junctionless double-gate MOSFETs
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Process integration of erbium-doped silicon light-emitting diodes and MOSFETs
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Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs
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Modeling of deep submicron silicon on insulator (SOI) mosfet [electronic resource] /
Dahkki: 250864 Aiman Abdul Rashid, et al.

A semi-empirical model for strained silicon mosfet [electronic resource] /
Dahkki: Mohammad 'Afif Kasno, et al.
Almmustuhtton: (2007)

Numerical study of carrier velocity for P-type strained silicon MOSFET /
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Almmustuhtton: (2009)

Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs
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